Entry Wu:1994:ENM from sigplan1990.bib

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BibTeX entry

@Article{Wu:1994:ENM,
  author =       "Michael Wu and Willy Zwaenepoel",
  title =        "{eNVy}: a non-volatile, main memory storage system",
  journal =      j-SIGPLAN,
  volume =       "29",
  number =       "11",
  pages =        "86--97",
  month =        nov,
  year =         "1994",
  CODEN =        "SINODQ",
  ISSN =         "0362-1340 (print), 1523-2867 (print), 1558-1160 (electronic)",
  ISSN-L =       "0362-1340",
  bibdate =      "Sat May 1 15:50:17 MDT 1999",
  bibsource =    "http://www.acm.org/pubs/toc/",
  URL =          "http://www.acm.org:80/pubs/citations/proceedings/asplos/195473/p86-wu/",
  abstract =     "This paper describes the architecture of eNVy, a large
                 non-volatile main memory storage system built primarily
                 with Flash memory. eNVy presents its storage space as a
                 linear, memory mapped array rather than as an emulated
                 disk in order to provide an efficient and easy to use
                 software interface. Flash memories provide persistent
                 storage with solid-state memory access times at a lower
                 cost than other solid-state technologies. However, they
                 have a number of drawbacks. Flash chips are write-once,
                 bulk-erase devices whose contents cannot be updated
                 in-place. They also suffer from slow program times and
                 a limit on the number of program/erase cycles. eNVy
                 uses a copy-on-write scheme, page remapping, a small
                 amount of battery backed SRAM, and high bandwidth
                 parallel data transfers to provide low latency,
                 in-place update semantics. A cleaning algorithm
                 optimized for large Flash arrays is used to reclaim
                 space. The algorithm is designed to evenly wear the
                 array, thereby extending its lifetime. Software
                 simulations of a 2 gigabyte eNVy system show that it
                 can support I/O rates corresponding to approximately
                 30,000 transactions per second on the TPC-A database
                 benchmark. Despite the added work done to overcome the
                 deficiencies associated with Flash memories, average
                 latencies to the storage system are as low as 180ns for
                 reads and 200ns for writes. The estimated lifetime of
                 this type of storage system is in the 10 year range
                 when exposed to a workload of 10,000 transactions per
                 second.",
  acknowledgement = ack-nhfb,
  classification = "C5310 (Storage system design); C5320G (Semiconductor
                 storage)C6120 (File organisation)",
  conflocation = "San Jose, CA, USA; 4-7 Oct. 1994",
  conftitle =    "Sixth International Conference on Architectural
                 Support for Programming Languages and Operating Systems
                 (ASPLOS-VI)",
  corpsource =   "Dept. of Electr. and Comput. Eng., Rice Univ.,
                 Houston, TX, USA",
  keywords =     "battery backed SRAM; cleaning algorithm; copy-on-write
                 scheme; design; emulated disk; eNVy; file organisation;
                 Flash memory; high bandwidth parallel data transfers;
                 large Flash arrays; linear memory mapped array;
                 measurement; memory architecture; nonvolatile main
                 memory storage system; page remapping; performance;
                 performance evaluation; persistent storage; program
                 erase cycles; random-access storage; reliability; slow
                 program times; software interface; solid-state memory
                 access times; storage space; theory; user interfaces;
                 user interfaces evaluation; write-once bulk-erase
                 devices",
  sponsororg =   "ACM; IEEE Comput. Soc",
  subject =      "{\bf D.4.2} Software, OPERATING SYSTEMS, Storage
                 Management, Main memory.",
  treatment =    "P Practical",
}

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