Entry Jackson:1992:THC from dectechj.bib
Last update: Thu Sep 27 02:13:54 MDT 2018
Top |
Symbols |
Math |
A |
B |
C |
D |
E |
F |
G |
H |
I |
J |
K |
L |
M |
N |
O |
P |
Q |
R |
S |
T |
U |
V |
W |
X |
Y |
Z
BibTeX entry
@Article{Jackson:1992:THC,
author = "Daniel B. Jackson and David A. Bell and Brian S. Doyle
and B. J. Fishbein and D. B. Krakauer",
title = "Transistor hot carrier reliability assurance in {CMOS}
technologies",
journal = j-DEC-TECH-J,
volume = "4",
number = "2",
pages = "100--113",
month = "Spring",
year = "1992",
CODEN = "DTJOEL",
ISSN = "0898-901X",
bibdate = "Thu Mar 20 18:15:43 MST 1997",
bibsource = "http://www.math.utah.edu/pub/tex/bib/dectechj.bib;
UnCover library database",
abstract = "Hot carrier-induced degradation of MOS transistors is
an essential consideration in the development of CMOS
processes. Most empirical approaches that characterize
transistor hot carrier lifetime only provide
indications of relative degradation; they do not make a
connection between circuit operation and hot carrier
degradation under experimental stress conditions.
Digitals Advanced Semiconductor Development Group has
devised a physically based method for ensuring that the
hot carrier lifetime of transistors produced by a new
process technology is acceptable. The models used
incorporate degradation under three voltage bias
conditions and allow for the effect of dominant
manufacturing variations on transistor hot carrier
lifetime. The method also takes into account the
sensitivity of the circuit design to transistor hot
carrier degradation. This hot carrier reliability
assurance gives developers the ability to predict
circuit hot carrier lifetime and thus allows them to
maximize transistor performance.",
acknowledgement = ack-nhfb,
classcodes = "B2560R (Insulated gate field effect transistors)",
classification = "B2560R (Insulated gate field effect transistors)",
keywords = "carrier degradation; CMOS technologies; degradation;
Degradation; hot carrier reliability; Hot carrier
reliability; insulated gate field effect transistors;
MOS; MOS transistors; reliability; Reliability;
reliability; transistor hot; Transistor hot carrier
degradation; transistor hot carrier lifetime;
Transistor hot carrier lifetime; transistors",
thesaurus = "Insulated gate field effect transistors; Reliability",
treatment = "P Practical",
}
Related entries
- ability,
3(2)76,
4(3)47,
5(2)50,
6(1)54
- account,
5(4)9,
6(4)75
- advanced,
2(2)52,
2(4)25,
2(4)80,
3(2)10,
3(2)76,
4(4)82,
6(1)54,
6(2)34
- allow,
1(9)29,
1(9)44,
2(1)49,
2(3)52,
2(4)61,
2(4)130,
3(1)10,
3(2)64,
3(3)7,
3(4)26,
4(1)8,
4(1)31,
4(1)40,
4(1)47,
4(1)56,
5(1)1,
5(1)34,
5(2)41,
5(2)100,
5(2)z,
5(3)32,
5(3)53,
5(3)63,
6(1)23,
6(3)8,
6(4)50,
7(1)34,
7(3)24,
7(3)66,
7(4)20,
8(1)46,
8(2)32,
8(2)46,
8(2)83
- approach,
1(3)88,
1(9)61,
1(9)78,
2(2)52,
2(2)64,
2(3)44,
2(3)64,
2(4)13,
3(1)45,
3(2)31,
4(2)51,
4(3)92,
4(4)165,
5(2)28,
5(3)8,
5(3)63,
5(3)80,
5(4)18,
5(4)36,
5(4)69,
6(4)50,
6(4)89,
7(1)66,
7(4)34,
8(2)32,
8(2)57,
8(2)72
- assurance,
4(4)165,
6(1)36
- based,
1(9)29,
2(1)73,
2(3)9,
2(3)24,
3(2)10,
3(2)19,
3(2)31,
3(3)36,
3(4)61,
4(1)31,
4(1)56,
4(2)39,
4(2)51,
4(3)38,
4(3)73,
4(3)82,
4(4)66,
4(4)82,
5(1)1,
5(1)34,
5(1)62,
5(1)117,
5(3)32,
5(3)43,
5(4)47,
5(4)59,
6(4)50,
7(1)34,
7(1)43,
7(1)89,
7(2)47,
7(4)34,
8(1)32,
8(2)96
- carrier,
2(4)80
- characterize,
2(3)84,
5(4)69
- circuit,
2(2)11,
2(2)27,
2(2)36,
2(2)52,
2(2)64,
2(2)73,
2(4)43,
2(4)80,
2(4)102,
2(4)118,
3(4)9,
4(2)12,
4(2)25,
4(2)39,
4(2)51,
4(2)73,
4(2)83,
4(2)114,
4(3)24,
4(3)38,
4(3)47,
4(4)35,
7(1)66,
7(1)100,
7(1)136
- CMOS,
1(7)139,
2(2)11,
2(2)27,
2(2)36,
2(2)52,
2(2)64,
2(2)73,
3(2)19,
4(2)12,
4(2)25,
4(2)39,
4(2)51,
4(2)73,
4(2)114,
4(3)24,
4(4)35,
4(4)82,
7(1)66,
7(1)89,
7(1)100,
7(1)119,
9(1)49
- condition,
4(3)24,
8(3)23
- connection,
2(1)49,
2(2)27,
3(2)42,
3(2)64,
5(1)107,
5(2)19,
6(1)9,
6(3)20
- consideration,
2(2)27,
3(2)31
- developer,
1(6)91,
1(9)44,
2(1)49,
2(3)34,
2(3)44,
2(3)74,
3(2)53,
5(1)70,
5(1)130,
5(2)100,
5(2)z,
5(3)32,
6(4)63,
7(2)5,
7(2)20,
7(4)101
- devised,
3(1)79,
5(3)43
- effect,
2(1)73,
3(3)1,
3(3)78,
5(4)47,
6(1)23,
6(2)22,
8(4)89
- empirical,
1(9)61,
6(1)23
- ensuring,
8(2)57
- essential,
2(4)90,
2(4)130,
3(3)7,
4(2)114,
5(4)18
- experimental,
6(1)36,
6(1)54
- field,
5(2)50
- gate,
2(4)43,
4(2)12,
4(2)39
- give,
1(6)91,
2(3)52,
8(1)59,
8(2)15,
8(2)46
- group,
1(9)51,
1(9)61,
1(9)78,
1(9)87,
2(2)73,
2(4)118,
3(1)70,
4(1)24,
5(2)84,
5(4)36,
6(4)26,
7(4)5
- has,
1(9)51,
1(9)61,
2(1)28,
2(3)16,
3(1)45,
3(2)10,
3(4)9,
3(4)36,
3(4)43,
3(4)55,
4(1)68,
4(2)12,
4(2)25,
4(2)39,
4(3)24,
4(3)38,
4(3)82,
4(3)92,
4(4)66,
4(4)121,
4(4)153,
4(4)193,
5(1)12,
5(1)62,
5(1)130,
5(3)21,
5(3)32,
5(3)43,
5(3)80,
5(4)18,
5(4)59,
5(4)69,
6(2)22,
6(2)62,
6(3)44,
7(1)7,
7(1)43,
7(1)66,
7(1)100,
7(1)119,
7(2)47,
7(4)5,
7(4)34,
7(4)52,
7(4)76,
7(4)101,
8(1)19,
8(1)59,
8(2)57,
8(2)96
- hot,
4(2)39,
9(3)6
- incorporate,
2(2)36,
4(2)12,
5(1)1,
5(1)12,
5(1)34,
5(1)117,
6(1)23,
6(1)66,
6(4)5,
6(4)50,
7(3)84,
8(2)5,
8(2)32
- make,
1(9)51,
2(1)16,
2(1)38,
2(2)89,
3(1)58,
3(2)10,
3(3)7,
3(3)16,
8(2)46,
8(2)72
- manufacturing,
4(2)51,
4(2)73,
4(2)83,
5(2)100,
5(2)z,
5(4)9,
7(2)47
- maximize,
7(4)52
- method,
2(2)73,
3(3)1,
3(3)78,
3(4)43,
3(4)55,
4(2)25,
4(3)24,
4(3)38,
5(1)62,
5(1)70,
5(2)9,
5(2)19,
5(2)28,
5(3)43,
5(3)97,
5(4)59,
6(2)62,
7(1)100,
7(1)136,
7(2)5,
7(2)20,
7(2)47,
7(3)84
- most,
2(2)73,
2(2)89,
2(3)64,
2(3)74,
2(4)25,
3(2)19,
4(4)82,
4(4)153,
5(2)28,
5(3)21,
5(3)32,
6(1)36,
7(3)5,
8(2)96
- new,
1(9)29,
2(1)73,
2(2)27,
2(2)36,
2(2)52,
2(4)13,
2(4)43,
2(4)90,
3(2)19,
3(3)7,
3(3)27,
3(3)36,
3(4)26,
3(4)55,
4(1)40,
4(2)12,
4(2)51,
4(2)73,
4(3)11,
4(3)24,
4(3)60,
4(3)82,
4(4)51,
4(4)66,
4(4)111,
4(4)165,
4(4)181,
5(1)1,
5(1)21,
5(1)34,
5(1)117,
5(1)130,
5(2)9,
6(1)36,
6(2)22,
6(3)57,
6(4)5,
6(4)89,
7(1)34,
7(1)66,
7(1)77,
7(1)119,
7(3)66,
7(3)84,
8(1)32,
8(1)59,
8(2)32,
8(2)46,
8(2)72,
8(2)83,
8(2)96,
8(2)117
- not,
2(1)60,
2(2)64,
2(2)73,
2(3)84,
2(4)130,
3(1)58,
3(4)26,
4(4)19,
5(2)28,
5(2)65,
5(3)43,
6(1)54,
6(4)26,
7(4)101,
8(1)19,
8(2)83
- only,
2(4)130,
3(2)64,
4(1)47,
4(3)38,
4(3)82,
4(4)19,
6(1)54,
6(2)22,
6(4)26,
7(1)136,
8(2)72,
8(2)83
- operation,
1(9)29,
2(4)90,
3(1)65,
3(2)19,
4(1)47,
4(2)12,
4(2)25,
4(4)35,
4(4)165,
5(2)84,
5(3)97,
6(1)9,
6(1)23,
6(3)44,
7(4)89
- physically,
6(2)8
- predict,
2(3)84,
3(1)58,
4(1)68
- produced,
4(2)39
- reliability,
1(1)71,
1(9)9,
2(3)9,
3(2)31,
4(2)114,
6(4)5,
8(2)5
- semiconductor,
2(2)36,
2(2)52,
2(4)43,
2(4)80,
3(2)31,
4(2)25
- take,
2(2)89,
2(3)9,
3(1)33,
3(3)16,
4(3)60,
4(3)92,
5(2)65,
6(3)44,
7(2)5,
7(2)56
- three,
2(2)11,
2(2)73,
2(3)9,
2(4)25,
2(4)61,
2(4)80,
3(2)19,
3(4)61,
4(2)12,
4(3)60,
4(4)35,
5(3)97,
5(4)36,
6(4)63,
7(3)39,
8(1)32
- thus,
1(9)16,
3(4)36,
3(4)61,
4(1)40,
4(4)19,
5(2)50,
5(2)65,
5(3)53,
5(4)9,
6(2)34,
6(4)26,
7(4)101,
8(1)32,
8(3)23
- transistor,
4(2)12,
4(2)25,
4(2)39,
4(3)24,
4(4)35,
7(1)100
- used,
1(2)48,
1(6)91,
1(9)16,
1(9)51,
2(1)16,
2(1)49,
2(2)52,
2(2)73,
2(2)89,
2(3)24,
2(3)44,
2(3)84,
2(4)13,
2(4)43,
2(4)102,
2(4)118,
3(1)33,
3(1)58,
3(1)79,
3(2)31,
3(3)1,
3(3)78,
4(1)68,
4(2)25,
4(2)39,
4(2)51,
4(2)73,
4(2)114,
4(3)82,
4(4)137,
4(4)181,
4(4)193,
5(1)70,
5(2)100,
5(2)z,
5(3)21,
5(4)18,
5(4)36,
5(4)69,
6(2)49,
6(3)20,
6(3)44,
6(4)26,
7(1)89,
7(1)100,
7(1)136,
7(2)5,
7(4)20,
7(4)101,
8(1)46,
8(2)32,
8(2)72,
8(2)83,
8(2)96
- voltage,
4(2)12,
4(2)39