Entry Jackson:1992:THC from dectechj.bib

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BibTeX entry

@Article{Jackson:1992:THC,
  author =       "Daniel B. Jackson and David A. Bell and Brian S. Doyle
                 and B. J. Fishbein and D. B. Krakauer",
  title =        "Transistor hot carrier reliability assurance in {CMOS}
                 technologies",
  journal =      j-DEC-TECH-J,
  volume =       "4",
  number =       "2",
  pages =        "100--113",
  month =        "Spring",
  year =         "1992",
  CODEN =        "DTJOEL",
  ISSN =         "0898-901X",
  bibdate =      "Thu Mar 20 18:15:43 MST 1997",
  bibsource =    "http://www.math.utah.edu/pub/tex/bib/dectechj.bib;
                 UnCover library database",
  abstract =     "Hot carrier-induced degradation of MOS transistors is
                 an essential consideration in the development of CMOS
                 processes. Most empirical approaches that characterize
                 transistor hot carrier lifetime only provide
                 indications of relative degradation; they do not make a
                 connection between circuit operation and hot carrier
                 degradation under experimental stress conditions.
                 Digitals Advanced Semiconductor Development Group has
                 devised a physically based method for ensuring that the
                 hot carrier lifetime of transistors produced by a new
                 process technology is acceptable. The models used
                 incorporate degradation under three voltage bias
                 conditions and allow for the effect of dominant
                 manufacturing variations on transistor hot carrier
                 lifetime. The method also takes into account the
                 sensitivity of the circuit design to transistor hot
                 carrier degradation. This hot carrier reliability
                 assurance gives developers the ability to predict
                 circuit hot carrier lifetime and thus allows them to
                 maximize transistor performance.",
  acknowledgement = ack-nhfb,
  classcodes =   "B2560R (Insulated gate field effect transistors)",
  classification = "B2560R (Insulated gate field effect transistors)",
  keywords =     "carrier degradation; CMOS technologies; degradation;
                 Degradation; hot carrier reliability; Hot carrier
                 reliability; insulated gate field effect transistors;
                 MOS; MOS transistors; reliability; Reliability;
                 reliability; transistor hot; Transistor hot carrier
                 degradation; transistor hot carrier lifetime;
                 Transistor hot carrier lifetime; transistors",
  thesaurus =    "Insulated gate field effect transistors; Reliability",
  treatment =    "P Practical",
}

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